Publication date: 8th July 2026
Colloidal quantum dots (CQDs) based on InAs offer a RoHS-compliant, CMOS-compatible platform for shortwave infrared (SWIR) optoelectronics, due to their size-tunable optical properties. However, extending their absorption toward the extended SWIR (eSWIR) regime typically requires increasing particle size, which often leads to loss of colloidal stability and introduces structural disorder that limits charge transport in resulting films. Here, we report the synthesis of ultra-long one-dimensional InAs colloidal quantum nanorods (CQNRs) with lengths up to ~200 nm, extending beyond conventional colloidal InAs nanostructures. The growth is governed by controlled use of lithium bis(trimethylsilyl)amide (LiN(Si(CH3)3)2), which enables directional elongation rather than isotropic particle growth. This strategy enables spectral extension into the eSWIR regime while maintaining colloidal stability, which is often compromised in highly enlarged QDs. The resulting CQNRs are colloidally stable and absorb up to 2000 nm in the eSWIR region. Photodiodes based on these CQNRs demonstrate low dark current density (6 μA cm−2) and external quantum efficiency of 10.6%, which we attribute to improved carrier transport and reduced interparticle boundary density, supported by four-dimensional scanning transmission electron microscopy analysis and lateral transport measurements. This work establishes anisotropic colloidal growth as a general strategy to access large, environmentally compliant InAs CQNRs, opening opportunities for scalable and high-performance eSWIR optoelectronic devices.
The authors acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST). Part of the research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) - Center of Excellence for Renewable Energy and Storage Technologies, under award number 5937. All authors thank the KAUST Solar Platform (KSP) for granting access to the characterization and device fabrication facilities and equipment employed herein. This research used the resources of the Supercomputing Laboratory at King Abdullah University of Science and Technology (KAUST) in Thuwal, Kingdom of Saudi Arabia.
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