Publication date: 8th July 2026
Colloidal InAs/ZnSe quantum dots (QDs) are promising heavy-metal-free emitters for near- and short-wave infrared optoelectronics. However, their implementation in light-emitting diodes (LEDs) has been limited by challenges in synthesis and losses in conventional device configurations. In 2024, we reported near-infrared LEDs emitting at 900 nm with an external quantum efficiency (EQE) of 13.3%, enabled by effective surface passivation of InAs QDs synthesized using an amino-As precursor[1]. We subsequently extended this platform to the short-wave infrared by employing a seeded-growth synthesis, achieving tunable electroluminescence from 1007 to 1410 nm and peak EQEs up to 6.20%, representing the first efficient InAs QD-LEDs emitting beyond 1100 nm[2]. Most recently, we established a seedless synthetic route to large InAs nanocrystals with ZnSe shelling, yielding photoluminescence tunable from 1000 to 1500 nm and providing the material foundation for infrared-emitting devices[3]. Building on this progress, we used a novel LED configuration to reduce device losses and improve EQE in this spectral range.
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