Publication date: 8th July 2026
Indium phosphide (InP) quantum dots (QDs) are the premier heavy-metal-free alternatives to cadmium-based materials for optoelectronic application ranging from displays to quantum photonic technologies. While traditional hot-injection synthesis methods yield the isotropic zinc-blende phase, we developed a framework for wurtzite-phase InP (w-InP) to unlock structural anisotropy and superior near-infrared (NIR) performance. Our approach utilizes cation exchange from monodisperse hexagonal Cu3-xP nanocrystal templates. A critical post-synthetic nitrosyl tetrafluoroborate treatment is employed to extract residual copper impurities and surface oxides. This transforms non-emissive cores into optoelectronic-grade material with resolved polarized excitonic features and tunable emission spanning 600–820 nm. We further advanced these systems through heteroepitaxial shell engineering using ZnSe/ZnS architectures achieving high photoluminescence quantum yields (PL QY). Moreover, advancements in shell and morphology control over III-V core/II-VI shell QDs and its effect on controlling the emission properties will be discussed.
Finally, we demonstrate the utility of w-InP QDs in photocatalytic hydrogen generation exploiting the deep red spectral region. To resolve the trade-off between catalytic overpotential and spectral harvesting, we introduce a "rainbow" compartment approach. By stacking different QD sizes to sequentially utilize high-energy then low-energy red photons, we maximize solar spectrum utilization and enhance conversion efficiency.
Collectively, this work establishes wurtzite InP as a high-performance platform for sustainable optoelectronics and energy technologies.
This research was supported in-part by the Israel Science Foundation within the MAPATS program (Grant No. 2655/23). The syupport of the Alfred & Erica Larisch memorial chair is acknolwedged.
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