Disentangling the Near Band-Edge Luminescence in Tin Iodide Perovskite Nanostructure Thin Films
Eleftheria Charalampous a, Andreas Manoli a, Paris Papagiorgis a, Julia Kraft b, Todosia Mihai-Theodor b, Marios Zacharias c d, Jacky Even c, Lorendana Protesescu b, Grigorios Itskos a
a Experimental Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus
b Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, Groningen 9747AG, The Netherlands
c Université de Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France
d Computation-based Science and Technology Research Center, The Cyprus Institute, Aglantzia 2121, Nicosia, Cyprus
Proceedings of Emerging Light Emitting Materials 2026 (EMLEM26)
Kallithea, Greece, 2026 September 20th - 23rd
Organizers: Grigorios Itskos and Maksym Kovalenko
Oral, Eleftheria Charalampous, presentation 030
Publication date: 8th July 2026

Advances in the colloidal synthesis and surface chemistry of tin-halide perovskite nanomaterials resulted in improvements of their chemical stability and luminescence efficiency. The photophysics of these nanomaterials remains though incompletely understood, with various studies reporting multiple near band-edge emission channels at cryogenic temperatures, attributed to free, bound and self-trapped excitons, defects, and different crystal configurations or nanostructure dimensionalities.1-5

Herein, we report on the variable-temperature photoluminescence (PL) of nanostructures of CsSnI₃ and FASnI₃ films6,7. Both types of films exhibit regions with dual near band-edge emission at cryogenic temperatures however the spectral and temporal characteristics of the doublet emission differ significantly between the inorganic and hybrid perovskite structures. In CsSnI₃, the two bands exhibit small energetic separation of 25–30 meV, with the low-energy (LE) peak progressively quenching and thermally repopulating the higher-energy (HE) transition, which remains the dominant emissive species at elevated temperatures. Furthermore, the LE emission exhibits a superlinear excitation PL dependence compared to the purely linear behaviour of the HE band. Based on such observations, HE and LE bands were tentatively assigned to free (HE) and surface or defect-bound (LE) excitons, respectively1.

In contrast, the dual near-band-edge emission in FASnI₃ exhibits a substantially larger energy separation of 90–100 meV, while increasing temperature can lead to the dominance of either the LE or the HE band. Furthermore the integrated area of both  features exhibit linear dependence with fluence and distinct excitation PL (PLE) bands. The data raise the possibility that the dual emission in FASnI3 may originate on exciton recombination in alternative local crystal configurations or band-edge minima. The results provide preliminary insight into the microscopic origin of low-temperature luminescence and highlight potential differences in exciton localization and structural characteristics of Cs- and FA-based tin-halide perovskite nanostructures.

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