Publication date: 8th July 2026
Field of Quantum dots has (QDs) been dominated by heavy metal based materials such CdSe, CdS, PbSe etc. However, they are toxic and should be replaced with more environment friendly materials. InP a III-V semiconductor which has a direct band gap, very low surface recombination velocity and excellent optical quality, is a strong contender for their replacement. Further, confining the material to 2D and 1D will be highly beneficial in its applications. However, the development of InP QDs has been impeded by several inherent challenges, including a high degree of covalency and the need for highly reactive precursors during synthesis. Synthesising two-dimensional (2D) III–V colloidal nanosheets remains a significant challenge due to the difficulties in controlling anisotropic growth and surface chemistry. Here we demonstrate colloidal synthesis of 2D and 1D InP nanostructures. Tuning the reaction temperature switches the growth from lateral 2D nanosheets to axial 1D nanowires, highlighting the thermodynamic and kinetic control over nanocrystal morphology. The resulting atomically flat nanosheets—measuring 2–5 monolayers thick with lateral dimensions of 20–80 nm—exhibit sharp, thickness-dependent excitonic absorption features with narrow linewidths below 80 meV. Post-synthetic surface passivation successfully eliminates oxide-related trap states, increasing the photoluminescence quantum yield from <5% to 25% while maintaining rapid radiative lifetimes.These results provide a deeper understanding of shape-controlled synthesis in covalent III–V materials, positioning InP nanostructures as a sustainable, cadmium-free platform for next-generation photonic applications.
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