Publication date: 8th July 2026
Metal halide perovskite nanocrystals (PNCs) are promising materials for next-generation optoelectronic applications owing to their high photoluminescence efficiency, tunable bandgaps, defect tolerance, and solution processability. However, several critical challenges remain, including the toxicity of lead, the oxidation instability of Sn²⁺, surface defect formation, insulating long-chain ligands, and intrinsic limitations in lead-free double perovskites.
This talk focuses on defect engineering and photophysical control in low-toxicity and lead-free perovskite nanocrystals, including Sn-based, Sn–Pb alloyed, and halide double-perovskite quantum dots. Through controlled doping, surface reconstruction, antioxidation strategies, and short-chain ligand engineering, we elucidate the key relationships among crystal structure, defect states, excited-state dynamics, and device performance[1-10].
In Sb³⁺/Mn²⁺ co-doped Cs₂NaInCl₆ QD inks, dual-ion doping combined with ligand shortening enables near-unity photoluminescence quantum yield, improved charge transport, suppressed nonradiative recombination, and enhanced LED performance[9]. For Sn-based and Sn–Pb alloyed PNCs, temperature-dependent spectroscopy, ultrafast measurements, STEM imaging, and theoretical calculations reveal the roles of static disorder, carrier–phonon coupling, antisite defects, and Sn oxidation in carrier trapping and recombination[6-8,10]. Furthermore, a synergistic antioxidation strategy using trioctylphosphine (TOP) and Sn powder effectively suppresses Sn(IV) formation, reduces defect-mediated trapping, and produces highly luminescent, phase-stable CsSnI₃ and Sn–Pb alloyed nanocrystals with prolonged carrier lifetimes[6].
Together, these results establish a versatile defect-engineering framework for low-toxicity and lead-free perovskite nanocrystals, providing important design principles for sustainable optoelectronic technologies, including LEDs, fluorescence thermometry, solar cells, and other advanced photonic devices.
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