Publication date: 8th July 2026
Short-wave infrared (SWIR) light sources are key components of a wide range of optoelectronic sensing technologies, including machine vision and light detection and ranging (LiDAR). Conventional SWIR light-emitting diodes (LEDs) are typically based on single-crystal III–V semiconductors, most commonly In₁₋ₓGaₓAs grown on InP. However, the complex multi-step epitaxial growth and device-processing requirements associated with these materials have limited their broader integration into consumer electronics.
Colloidal quantum dots (QDs) offer a promising alternative platform for SWIR light emission.1 These solution-processable nanomaterials can be synthesized at low cost, while their optical properties can be tuned through control of their size, shape, and composition. Their compatibility with established and inexpensive complementary metal–oxide–semiconductor (CMOS) technologies further makes them attractive for scalable optoelectronic applications.
Although red-, green-, and blue-emitting QDs have already achieved commercial success in display technologies, SWIR-emitting QDs have yet to enter the consumer market. A major challenge is achieving high-efficiency emission beyond 1100 nm while remaining compliant with the European Restriction of Hazardous Substances (RoHS) Directive. To date, state-of-the-art SWIR QD-LEDs have largely relied on toxic Pb- and Hg-based chalcogenide QDs, owing to their mature and well-established synthetic chemistry. By contrast, progress with indium arsenide (InAs) QDs has been constrained by the limited availability of suitable precursors, which has contributed to low photoluminescence quantum yields, broad size distributions, and electroluminescence typically restricted to wavelengths below 1100 nm.
In this talk, I will present our recent advances in the synthesis of InAs QDs using an amino-As precursor2,3,4,5 and their integration into SWIR light-emitting diodes.6,7,8 Particular emphasis will be placed on InAs/ZnSe core/shell QDs and the corresponding LED devices enabling electroluminescence beyond 1100 nm.
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