Publication date: 8th July 2026
Colloidal III–V semiconductor nanocrystals have emerged as promising materials for infrared optoelectronics owing to their size-tunable electronic structures and solution-processability. Despite significant progress in recent years, establishing a clear relationship between synthetic chemistry and the resulting electronic properties remains a central challenge because of the highly covalent nature of III–V bonding and the complexity of their reaction pathways and surface structures.
In this presentation, I will discuss our recent efforts to understand how reaction chemistry influences the structural and electronic characteristics of colloidal III–V semiconductor nanocrystals. I will first introduce mechanistic studies on precursor conversion and reaction pathways that provide new insights into the formation of III–V nanocrystals. I will then present recent observations on shape-defined InAs quantum dots, highlighting how synthetic control over crystal morphology offers opportunities to investigate electronic structures beyond conventional quantum-confinement considerations. Finally, I will briefly discuss how these advances contribute to infrared optoelectronic functionalities in III–V nanocrystal solids.
Rather than providing a comprehensive picture, this presentation aims to highlight several emerging questions regarding the interplay among reaction chemistry, crystal structure, surface characteristics, and electronic structure, and to discuss possible directions toward a more fundamental understanding of colloidal III–V semiconductor nanocrystals.
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