Publication date: 8th July 2026
Small band-gap semiconductors are attractive for infrared optoelectronic applications, yet their performance is often limited by high thermal recombination rates and low carrier mobility. Heterostructure engineering provides a powerful approach to investigate and control the interfacial processes governing charge transport, recombination, and structural properties in such systems. In vapor-grown heterostructures, the interface between the materials plays a critical role in determining local crystal symmetry, structural disorder, and the resulting optical properties. In this context, we investigate micron-scale PbS-CsPbX3 (X = Br, I, Cl) heterostructures grown by a sequential two-step chemical vapor deposition (CVD) process, combining a narrow band-gap semiconductor with lead halide perovskites (LHP) known for their exceptional optoelectronic properties and compositional tunability.
Electron diffraction and cathodoluminescence (CL) measurements reveal local symmetry lowering and increased structural disorder within the perovskite lattice near the PbS interface. These structural modifications are accompanied by pronounced changes in the optical response compared with reference perovskite crystals grown directly on Si. Spatially, and temperature-resolved cathodoluminescence further demonstrates that these effects originate at the interface and extend into the perovskite crystal.
In addition to CsPbBr3, the same growth approach was extended to mixed-halide PbS-CsPbBr2I and PbS-CsPbBr2Cl heterostructures. CL characterization indicates that the PbS interface also influences the optical response and halide redistribution in these mixed-halide systems, highlighting the broader impact of interfacial interactions on perovskite properties.
Together, these results demonstrate how the PbS interface influences the structural and optical properties of vapor-grown lead halide perovskites and provide further insight into structure-property relationships in hybrid semiconductor heterostructures, for future optoelectronic and photovoltaic applications.
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