Sn Perovskite Based Solar Cells Harvesting Light in NIR Region

Takahiro Saitoh^a, Naotaka Fujikawa^a, Shyam Pandey^a, Tingli Ma^a, Yuhei Ogomi^a, Atsushi Morita^a, Shota Tsukamoto^a, Shuzi Hayase^a^,^d, Shen Qing^b^,^d, Taro Toyoda^b^,^d, Kenji Yoshino^c^,^d

^aKyushu Institute of Technology, Japan, 204 Hibikino Wakamatsu-ku, Kitakyushu - Fukuoka, 808, Japan

^bGraduate School of Informatics and Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

^cDepartment of Electrical and Electronic Engineering, University of Miyazaki, 1-1, Gakuen Kibanadai Nishi, Miyazaki, 889-2192, Japan

^dCREST, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan

International Conference on Hybrid and Organic Photovoltaics
Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)

Ecublens, Switzerland, 2014 May 11th - 14th

Organizers: Michael Graetzel and Mohammad Nazeeruddin

Oral, Shuzi Hayase, presentation 064
Publication date: 1st March 2014

All-solid state solar cells consisting of perovskite have recently attracted interest because of the high efficiency reaching 12-16%(1). We have reported Pb perovskite solar cells with 13 % efficiency which were passivated by Y2O3 or aminoacid HI salts (2). However, the edge of wavelength for light harvesting of these Pb perovskite has been limited to 800 nm. Light harvesting in the area longer than 800 nm (near infrared region: NIR region) is necessary to realize high efficiency tandem perovskite solar cells. It has been reported that Sn halide perovskites have electronic absorption up to 1000nm(2). However, there is no report on the Sn based solar cells. We have succeeded in harvesting energy in the NIR region by using Sn halide based perovskite materials. Conduction bands of Sn based perovskite pwere was -3.9 and from the vacuum level, which was shallower than that of titania (-0.40 eV) suggesting that electron injections are possible from these perovskites to titania. The cell has the following composition: F-doped SnO₂ layered glass/compact titania layer/porous titania layer/Sn based perovskite material/p-type polymer semiconductor. The edge of the incident photon to current efficiency (IPCE) edge reached 1040 nm. 4.18 % efficiency with open circuit efficiency (Voc):0.42 V, fill factor (FF): 0.5, short circuit current (Jsc): 20.04 mA/cm² is reported.

Fig. 1. IPCE curve for Sn perovskite based solar cell
1a) H. J. H. Noh, et.al., Nano Lett., 2013, 13, 1764; 1b) S. Kim, et.al., Sci. Rep. 2012, 2 . 591 2012/ DOI: 10.1038/srep00591; 1c) J. Burschka, et.al., Science, 2012, 338, 643; 1d) J. M. Ball et.al., Energy Environ. Sci., 2013, 6, 1739; 1e) D. Liu, et.al., Nature Photonics, 2013,342 DOI: 10.1038; 1f) H. J. Snaith, et.al., J. Phys. Chem. Lett., 2013, 4, 3623; 1g) M. Liu, et.al., doi:10.1038/nature12509; 1g) J. H. Im, et.al., Nanoscale 2011, 3, 4088. 2) Y. et.al., Chem.Phys.Chem. 10.1002/cphc.201301153 (2014). 3) D.B Mitzi, et.al.,Nature 1994, 369, 467.

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