Experimental and numerical studies of recombination losses across disordered semiconductor heterojunctions in solar cells
Juan A. Anta a, Jose P. González a, Jesus Idígoras a, Gerko Oskam b, Humberto Mandujano-Ramírez b
a Pablo de Olavide University, Sevilla, Spain, Carretera de Utrera, km. 1, Montequinto, Spain
b Department of Applied Physics, CINVESTAV-IPN, Ant. Carr. a Progreso km 6, Cordemex, Mérida, Yucatán, 97310, Mexico
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Ecublens, Switzerland, 2014 May 11th - 14th
Organizers: Michael Graetzel and Mohammad Nazeeruddin
Poster, Juan A. Anta, 086
Publication date: 1st March 2014

Recombination between photogenerated electrons and holes is a key limiting factor in the functioning of dye-sensitized solar cells (DSC) and other new generation solar cells like organic solar cells and perovskite-based solar cells. In this paper we investigate recombination from a fundamental point of view using random-walk numerical simulations (RWNS, Monte Carlo) and experimental studies of the recombination rate in DSC using open-circuit voltage decay (OCVD), electrochemical impedance spectroscopy (EIS) and Intensity-modulated voltage spectroscopy (IMVS). Specifically, we look at the impact of energy disorder and chemical environment on the recombination process. Experimentally, we present results for the electron lifetime in test DSC devices where the polarity of the solvent is systematically varied. The obtained results can be rationalized by RWNS calculations where charge transfer across the interface is modeled by a combination of a hopping mechanism of transport and recombination probabilities that formally depend on the reorganization energy and the distribution of donor and acceptor states.


Illustration of transport/recombination mechanisms across a disordered heterojunction
1. González-Vázquez J.P., Oskam G., Anta J.A., J. Phys. Chem. C, 2012, 116, 22687–22697. 2. H.J. Mandujano-Ramírez., J.P. González-Vázquez., G. Oskam., T. Dittrich., G. Garcia-Belmonte., I. Mora-Seró., J. Bisquert., J.A. Anta.,Phys. Chem. Chem. Phys., 2013, Dec 23, 10.1039/C3CP54237H. 3. Jesús Idígoras, Laia Pellejà, Emilio Palomares, Juan A. Anta, J. Phys. Chem. C, 2014, in press
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