Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Publication date: 1st March 2014
Hybrid inorganic/organic junction solar cells are promising candidates for highly efficient and cost-effective photovoltaic devices. The solution processed organic serves as transparent front contact and introduces the charge separating interface, while the light is absorbed in theinorganic material with its good charge carrier transport properties. However, silicon (Si) is known for its low performance in Schottky junction device configuration with metals because of large reverse saturation currents and Fermi-level pinning by a high density of surface states.
Yet, a junction with the ‘metal’-like wide-gap polymer PEDOT:PSS and n-doped silicon shows remarkable characteristics. C-V and I-V measurments proof that at the hybrid n-silicon/PEDOT:PSS junction the Fermi-level is unpinned and an inversion layer is created on the silicon surface [2]. The charge transport at the interface is dominated by minority carrier diffusion with very low reverse saturation currents. These properties promise hybrid solar cells with large open-circuit voltages. The short-circuit current as mainly limited by the charge transport in the polymer. By tailoring the morphological structure of PEDOT:PSS the hole transport properties across the n-Si/PEDOT:PSS interface and in the polymer itself are improved, which directly influence the solar cell parameters [1]. We present planar n-Si/PEDOT:PSS junctions with open circuit voltages up to 640mV and power conversion efficiencies of 12% [2].
We will also discuss the stability of the hybrid interface under ambient conditions. While we will take a look at the degeneration mechanisms in the n-Si/PEDOT:PSS solar cells, we will also present possibilities to protect the hybrid junction. First results and the potential of combining this hybrid solar cell concept with silicon nanostructures and large arrays of homogenously regular silicon nanowires on multicrystalline thin film silicon on glass [3] will be presented. In this we will emphasize the importance of PEDOT:PSS penetrating the silicon nanostructure.
J-V-characteristics of the photovoltaic behavior of a n-silicon/PEDOT:PSS device under AM1.5 irradiation spectrum. The inset shows the external quantum efficiency (EQE) of the device and the Standard Reference Spectra ASTM G-173-03 at global tilt. The picture shows the structure and dimension of the proposed solar cell. [2]
[1]Pietsch, M.; Bashouti, M.; Christiansen, S. The Role of Hole Transport in Hybrid Inorganic/Organic Silicon/Poly(3,4-ethylenedioxy-thiophene):Poly(styrenesulfonate) Heterojunction Solar Cells. The Journal of Physical Chemistry C 2013, 117, 9049−9055. [2]Pietsch, M.; Jäckle, S.; Christiansen, S. Hybrid n-Si/PEDOT:PSS Inversion Layer Schottky Junction Solar Cells. Advanced Energy Materials 2014, in review. [3]Schmitt, S.; Schechtel, F.; Amkreutz, D.; Bashouti, M.; Srivastava, S.K.; Hoffmann, B.; Diecker, C.; Spiecker, E.; Rech, B.; Christiansen, S.; Nanowire arrays in multi-crystalline silicon thin films on glass: a promising material for photovoltaics, optoelectronics and fundamental research in nanotechnology. Nano Letter 2012 12(8), 4050.
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International Conference on Hybrid and Organic Photovoltaics (HOPV) is celebrated yearly in May. The main topics are the development, function and modeling of materials and devices for hybrid and organic solar cells. The field is now dominated by perovskite solar cells but also other hybrid technologies, as organic solar cells, quantum dot solar cells, and dye-sensitized solar cells and their integration into devices for photoelectrochemical solar fuel production.
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