The electronic structure of the TiOx/C60 interface before and after UV illumination: On track of the origin of S-shaped IV-curves by photoemission spectroscopy
Wolfram Jaegermann a, Thomas Mayer a, Philip Reckers a, Sara Trost b, Thomas Riedl b
a Technical University of Darmstadt, Jovanka-Bontschits-Straße, 2, Darmstadt, Germany
b University of Wuppertal, Germany, Rainer-Gruenter-Straße, 21, Wuppertal, Germany
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Ecublens, Switzerland, 2014 May 11th - 14th
Organizers: Michael Graetzel and Mohammad Nazeeruddin
Poster, Philip Reckers, 348
Publication date: 1st March 2014

Detrimental S-shaped I-V characteristic are frequently observed in inverted organic solar cells (IOSC). For instance IOSC with the device structure ITO/TiOx/ PCBM:P3HT/MoO3/Ag show such a behavior. Clearly the Metal-Oxide/Organic-Acceptor interface has been identified as the cause of the S-shape. By so called light soaking the S-shape can be removed when the cell is illuminated with UV radiation. It has been shown that by replacing TiOx with AZO, the light soaking issue can be overcome and good diode characteristics and cell efficiencies are obtained. We attempt to characterize the electronic structure of the Metal-Oxide/Acceptor interfaces by photoemission spectroscopy (PES) using C60 as model Organic-Acceptor and compare the TiOx/C60 to AZO/C60 and the TiOx/C60 and light-soaked TiOx/C60 interfaces. PES of the TiOx /Acceptor interface reveals a misalignment of the TiOx conduction band maximum (CBM) and the C60 HOMO introducing a step for electron extraction, whereas for the AZO/Acceptor interface the C60 HOMO is found 0.1 eV above the AZO conduction band. A strong dipole of 0.4 eV induced at the AZO/Acceptor interface is the cause of the line up improvement1. In order to reveal the action of light soaking, we also investigate the influence of UV radiation on the electronic structure of the TiOx/C60 interface. We observe that in-situ UV illumination induces a shift of the C60 levels upward by 0.2 eV with respect to the constant TiOx orbitals due to an induced dipole of 0.2 eV at the TiOx/C60 interface. Thus, similar as by replacing TiOx by AZO, light soaking of TiOx shifts the Acceptor HOMO upward with respect to conduction band of the metal oxide electron extraction layer.

1.            Trost, S.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Görrn, P.; Reckers, P.; Maibach, J.; Mayer, T.; Riedl, T. Overcoming the “Light-Soaking” Issue in Inverted Organic Solar Cells by the Use of Al:ZnO Electron Extraction Layers. Advanced Energy Materials 2013,



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