Electron and hole blocking layers in planar CH3NH3PbI3 perovskite solar cells
Thi Thu Trang Pham a, Jorg Ackermann a, Olivier Margeat a, Meriem Gaceur a
a Aix-Marseille University, Centre Interdisciplinaire de Nanosciences de Marseille CINaM, UMR CNRS 7325, Marseille,
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Ecublens, Switzerland, 2014 May 11th - 14th
Organizers: Michael Graetzel and Mohammad Nazeeruddin
Poster, Thi Thu Trang Pham, 388
Publication date: 1st March 2014

Organometal trihalide perovskite has become the most interesting material for low-cost photovoltaic devices and a promising alternative for conventional materials. However, the highest efficiencies up-to-date are still based on the incorporation with mesoporous structure. Thin film planar or bilayer configuration of perovskite solar cells is attractive not only because of the high efficiency but also of the facile processing method, yet is still not widely explored due to the limitation of morphological control. In a planar configuration, the choice of interfacial layer to enhance the charge transport and reduce recombination between the active layer and the electrodes is crucial. We study several materials including graphene oxide, Cs-doped graphene oxide, ZnO and Al-doped ZnO by low-temperature solution processes suitable for electron and hole blocking in a planar configuration for a potentially low-cost high efficiency CH3NH3PbI3 perovskite solar cell. These materials can be considered for both conventional and inverted structures of perovskite-based solar cells.



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