Improved Performance and Suppressed J-V Hysteresis by In-situ Formation of Planar PbI2 Layer at Perovskite Heterointerface
Ayodhya Tiwari a, Stephan Buecheler a, Cyrill Meier a, Benjamin Bissig a, Enrico Avancini a, Stefano Pisoni a, Johannes Löckinger a, Fan Fu a
a EMPA - Swiss Federal Laboratories for Materials Science and Technology, Überland Strasse, 129, Dübendorf, Switzerland
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Oral, Fan Fu, presentation 125
Publication date: 28th March 2016

Thin-film solar cells based on organic-inorganic hybrid perovskite absorber layers demonstrate excellent power conversion efficiency exceeding 20%. Despite the impressive achievements in efficiency, hysteresis in current-density voltage (J-V) measurements is commonly observed in perovskite solar cells, particularly pronounced in planar structure employing metal oxide (TiO2 or ZnO) electron transporting layer. This phenomenon poses serious challenge in accurately determining the photovoltaic parameters and raise concerns on device stability. The origin of the hysteresis has been correlated either extrinsically to charge trapping or imbalanced charge transfer mechanisms or intrinsically to ferroelectricity or ionic migration in perovskite layer. However, a comprehensive understanding essential for developing feasible solutions to eliminate hysteresis is yet to be established. In this work, we systematically investigate the bias, time and temperature dependent characteristics of J-V hysteresis, and identify that a charge extraction barrier at perovskite interface is responsible for the hysteresis. We further show that by engineering the perovskite-metal oxide heterointerface, the J-V hysteresis can be effectively eliminated and the photovoltaic performance is improved substantially. This is realized by simultaneously incorporation of PCBM and in-situ formation of planar PbI2 layer between perovskite and PCBM as revealed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis. This work provides a deeper understanding of the origin of hysteresis phenomenon and highlights the importance of tailoring the perovskite-metal oxide interface.



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