Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Publication date: 28th March 2016
For the efficient hybrid solar cells based on the organometal halide perovskites, real origin of the I-V hysteresis became a big issue and has been discussed widely in the last few years. Usually in standard planar structure perovskite solar cells using TiO2 electron acceptor layer, reverse scan condition show higher power conversion efficiency that forward scan conditions. However, inverted structure devices usually don't show significant hysteresis but some time forward scan conditions shows higher efficiency that reverse scan. In this study, simulated I-V curves of different equivalent circuits models were discussed and validated with experimental I-V curves for standard and inverted structure perovskite solar cells. For the standard structure, equivalent circuit model with a series of double diodes, capacitors, shunt resistances, and single series resistance produces the simulate I-V curves with large hysteresis matching with the experimentally observed curves. The electrical capacitances generated by defects due to the mismatch at the TiO2/CH3NH3PbI3 and CH3NH3PbI3/spiro-OMeTAD interface are truly responsible for the hysteresis in the perovskite solar cells. For inverted structure the hysteresis effects is coming from the Schottky contact at metal/semiconductor (Me/PCBM) interface. Equivalent circuit model including a Schottky type diode reproduce the experimental I-V curves.
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International Conference on Hybrid and Organic Photovoltaics
International Conference on Hybrid and Organic Photovoltaics (HOPV) is celebrated yearly in May. The main topics are the development, function and modeling of materials and devices for hybrid and organic solar cells. The field is now dominated by perovskite solar cells but also other hybrid technologies, as organic solar cells, quantum dot solar cells, and dye-sensitized solar cells and their integration into devices for photoelectrochemical solar fuel production.
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