Effects of dopants in hole transport material (HTM) for perovskite solar cells
Yi-Bing Cheng a, Jinbao Zhang a, Quentin Daniel b, Tian Zhang a, Xiaoming Wen c, Bo Xu d, Licheng Sun b, Udo Bach e
a Monash University, Department of Materials Science and Engineering, AU, Alliance Lane, 22, Clayton, Australia
b KTH The Royal Institute of Technology, Roslagstullsbacken 21, Stockholm, Sweden
c Swinburne University of Technology, Australia, Australia
d Uppsala University, Ångström Laboratory, Sweden, Lägerhyddsvägen, 1, Uppsala, Sweden
e Monash University, Department of Chemical Engineering, Australia
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Benidorm, Spain, 2018 May 28th - 31st
Organizers: Emilio Palomares and Rene Janssen
Poster, Yi-Bing Cheng, 082
Publication date: 21st February 2018

Chemical doping of organic semiconductors has been recognized as an effective way to enhance the electrical conductivity. In perovskite solar cells (PSCs) various types of dopants have been developed for organic hole transport materials (HTMs). For example, cobalt-based complexes have been added into spiro-OMeTAD, increased its hole conductivity significantly. However, there is luck of understanding of other effects of the dopants on the solar cells performance, such as interfacial recombination. This work intends to investigate the role of the dopants in PSCs. Three copper-based complexes with controlled redox activities are applied as dopants in PSCs, and it is found that the redox potentials of the dopants are crucial for the doping efficiency and conductivity of HTM as well as device performance. It is observed that one of the main limiting factors for the Voc of PSCs is the interfacial charge recombination across perovskite/hole conductor interface. Detailed characterization by electron lifetime and transient photoluminescence measurement suggested that both dopants and the oxidized spiro-OMeTAD (spiro-OMeTAD+) play important roles in the recombination kinetics. This work has demonstrated that the dopants in the HTMs participate in the interfacial recombination and significantly influence the Voc of the devices.

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