Thin layer for efficient charge separation of bismuth iodide thin films for improved carrier transportation for photovoltaic application
Bowon Yoo a, Dong Ding a, Luis Lanzetta a, Jose Marin-Beloqui a, Xiangnan Bu a, Saif Haque a
a Department of Chemistry, Imperial College London, South Kensington Campus London, London, United Kingdom
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Benidorm, Spain, 2018 May 28th - 31st
Organizers: Emilio Palomares and Rene Janssen
Poster, Bowon Yoo, 098
Publication date: 21st February 2018

 Stable and non-toxic bismuth iodide, which can address the intrinsic problems of lead based perovskites, has become one of emerging promising materials for solar cell active layer with its prospective optical properties such as narrow band gap (1.7 eV) and high absorption coefficient (105 cm−1).1,2 Despite these promising features, solar cells employing this material has only achieved around 1% yet which is quite far apart from the theoretical limitation from its band gap, 28%.3,4 This unsatisfactory efficiency may come from its very short carrier lifetimes (180-240ps).2 Therefore, efficient separation of mobile excitons is necessary through optimisation of thin film architectures. In this talk, we will present some of our results and progress on optimisation of the device structure for bismuth iodide. In particular, we will report the use of bismuth sulphur iodide interlayers to achieve efficient charge separation. We will also present results from transient optical spectroscopy studies addressing interfacial charge separation dynamics and yields in photoactive layers comprising hole transporting materials and bismuth iodide. Finally, we will present devices based on bismuth iodide absorbers that exhibit power conversion efficiencies > 1.2% efficiency and good operation stability.

 

 

 

 

 

 

References

1. N. J. Podraza, et al., Journal of Applied Physics., 2013, 114, 033110.

2. R. E. Brandt, et al., J. Phys. Chem. Lett., 2015, 6, 4297.

3. U. H. Hamdeh, et al., Chem. Mater., 2016, 28, 6567.

4. W. Shockley and H. J. Queisser, J. Appl. Phys., 1961, 32, 510.

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