Visualising the Impact of Defects and Strain on Halide Perovskite Structures
Samuel Stranks a
a Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Roma, Italy, 2019 May 12th - 15th
Organizers: Prashant Kamat, Filippo De Angelis and Aldo Di Carlo
Invited Speaker, Samuel Stranks, presentation 058
DOI: https://doi.org/10.29363/nanoge.hopv.2019.058
Publication date: 11th February 2019

Halide perovskites are exciting materials for a range of optoelectronic devices. One of their most tantalizing features is the potential for tunable emission with high luminescence yields. Such properties are promising for reaching the radiative efficiency limits in single and multi-junction solar cells as well as color-tunable light-emitting diodes. However, there are a number of challenges in mitigating all defects in order to attain high luminescence yields and color stability across a range of bandgaps.

Here I will present a selection of our group’s ongoing work to understand the nature of defects leading to non-radiative power losses in a range of halide perovskite films, crystals and device systems, and how we can use this information to push materials and devices towards their efficiency limits. We use a selection of nano- and micro-scale imaging techniques including photoluminescence, photo-emission and nano-X-Ray-Diffraction microscopy to visualise the impact of defects and strain on local charge carrier recombination. We also employ passivation techniques designed to remove these spatially heterogeneous losses, which we demonstrate on a variety of systems. Finally, we show that these approaches ultimately lead to tangible improvements in solar cell and LED performance and bandgap stability.

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