Recombination and Electrical Stability. What Happens at the HSL/Perovskite Interface and How to Solve it
Diego Di Girolamo a b e, Aldo Di Carlo a c, Danilo Dini e, Antonio Abate b d
a CHOSE - Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico, 1, Roma, Italy
b Young Investigator Group Active Materials and interfaces for stable perovskite solar cells, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekulestraße, 5, Berlin, Germany
c LASE–Laboratory for Advanced Solar Energy, National University of Science and Technology MISiS, Leninsky Avenue, 6, Moskva, Russian Federation
d Department of Chemical, Materials and Production Engineering, University of Naples Federico II, Piazzale Tecchio 80, 80125 Fuorigrotta, Naples
e Department of Chemistry Chemistry, University of Rome La Sapienza, Piazzale Aldo Moro 5, 00185, Rome
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Roma, Italy, 2019 May 12th - 15th
Organizers: Prashant Kamat, Filippo De Angelis and Aldo Di Carlo
Poster, Diego Di Girolamo, 067
Publication date: 11th February 2019

High quality of perovskite solar cells interfaces is mandatory to advance toward a stable and commercially viable technology. Employing inorganic selective contacts is appealing and considered a key requirement for the stability goal [1], however metal oxides - perovskite interface remains a complex object. Metal oxides semiconducting properties are due to their defectivity, with the surface chemistry strongly depending on processing conditions and dramatically affecting surface electronics. When taking into account the dynamic defectivity of perovskite the picture blurs even further.

We focused on NiO/Perovskite interface, in p-i-n PSC with 18% power conversion efficiency. NiO is among the best candidates to replace Spiro-OMeTAD in devices, unfortunately its performances as HSL still lack behind molecular and polymeric alternatives. We moved from NiO bulk to its surface, recognizing the key role of the latter. By employing an ultra-thin, solution processed inorganic interlayer we addressed the hole-electron recombination at the interface, thus enhancing the Voc of the devices, that constitutes a key limit of NiO/PSK interface. More importantly, we identified and characterized the interfacial redox activity. Strategies to overcome this detrimental process are discussed, showing how a superior electrical stability can be achieved, together with better performances.

The robust solutions developed are important per se, but will also inspire future research developments to rationally shape the interfaces, and the performances and stability of perovskite solar cells.

© Fundació Scito
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