Universal Self-Assembled Monolayer Contacts for >20% Efficient Perovskite Solar Cells
Amran Al-Ashouri a, Artiom Magomedov b, Marcel Roß a, Marko Jošt a, Ganna Chistiakova c, Eike Köhnen a, Sergiu Levcenco d, José A. Márquez Prieto d, Tadas Malinauskas b, Charles J. Hages d, Thomas Unold d, Lars Korte c, Bernd Rech c, Vytautas Getautis b, Steve Albrecht a
a Young Investigator Group Perovskite Tandem Solar Cells, Helmholtz-Zentrum Berlin, Berlin, Germany
b Department of Organic Chemistry, KTU, Kaunas, Lithuania
c Institute Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Berlin, 14109, Germany
d Dept. of Structure and Dynamics of Energy Materials, HZB, Berlin, Germany
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Roma, Italy, 2019 May 12th - 15th
Organizers: Prashant Kamat, Filippo De Angelis and Aldo Di Carlo
Poster, Amran Al-Ashouri, 171
Publication date: 11th February 2019

In a recent publication we introduced a novel concept for hole-selective contacts in perovskite solar cells (PSCs) by utilizing a molecule that forms a self-assembled monolayer (SAM) on the transparent conductive oxide (TCO) via covalent bonding [1]. Here we now present results from a new class of hole-selective SAMs that enable p-i-n (“inverted”) PSCs with open-circuit voltages (Vocs) of up to 1.19 V, fill factors of over 80 % and power conversion efficiencies of up to 21 %. These values rival currently best published PCSs in p-i-n architecture and are obtained entirely without interlayers, dopings and perovskite post-treatments. In addition, we show that the SAMs enable highly efficient p-i-n PSCs with over 20 % power conversion efficiency for three different perovskite compositions and two SAM deposition techniques, underlining the SAM’s universal applicability.

We analyze the SAMs by ultraviolet and X-ray photoemission spectroscopy to assess the surface modification and energy level alignment. Hyperspectral absolute photoluminescence (PL) spectroscopy reveals a significant reduction of non-radiative recombination losses at the hole contact interface as compared to standard hole selective materials such as PTAA. This is confirmed by higher charge carrier lifetimes of well over 2 µs measured in transient PL. These improvements are partially the origin of the relatively high Voc in this cell design. Considering the simple processing techniques of this new generation of SAMs and the expected low price of the molecule synthesis, we believe that this approach is highly promising for future generations of inverted PSCs.

Funding  was  provided  by  German Federal  Ministry  for  Education  and Research  (BMBF)  (grant  no. 03SF0540)  within the project  “Materialforschung  für  die  Energiewende”, by the Helmholtz Foundation within the HySPRINT Innovation lab project  and  by  European Union’s Horizon 2020 research and innovation programme under grant agreement no. 763977 of the PerTPV project. 

© Fundació Scito
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