Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Publication date: 6th February 2020
Perovskite solar cells based on MAPbBr3 received less attention due to their high bandgaps that are unsuited for high-performance solar cells. However, if realized, high open‐circuit voltages (VOC) offer considerable opportunities for different applications such as water splitting and the pathway to an all-perovskite multijunction device that urgently requires wide band gap perovskite with high Vocs.
Thus, investigating the reasons why high voltage with adequate output power have not been achieved is an underexplored part in perovskite research.
Interfacial carrier recombination leads to reduced carrier lifetimes and voltage loss. To address this issue and to further improve the high Voc of methylammonium lead tri-bromide (MAPbBr3) perovskite solar cells, interface passivation techniques are an important strategy. Here we demonstrate two ultrathin polymeric passivation layers consisting of PCBM and PMMA: PCBM mixture as well as PMMA that can effectively passivate defects at the perovskite/ ETL and perovskite/ HTL interfaces, respectively, where they significantly suppress interfacial recombination.
Crystallization and film-formation are key for high quality perovskite materials. Thus, perovskite crystallization was investigated with the established anti-solvent and the novel flash infrared annealing (FIRA) with and without passivation layers. This is the first demonstration of FIRA for MAPbBr3 revealing altered film morphology and therefore a novel strategy to control the crystallization process.
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