Planar perovskite solar cells with negligible hysteresis using UVO-treated-SnO2 as electron transporting layer
Sofia Masi a, Perla Fabiola Mendez Herrera b, Salim K.M Muhammamed a, Eva Maria Barea Berzosa a, Iván Mora-Seró a
a Institute of Advanced Materials (INAM), Universitat Jaume I, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
b Universidad Autonoma de Sinaloa, Mexico
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Roma, Italy, 2019 May 12th - 15th
Organizers: Prashant Kamat, Filippo De Angelis and Aldo Di Carlo
Poster, Sofia Masi, 227
Publication date: 11th February 2019

Perovskite material has recently stimulated great interest in the scientific community, as it enabled power-conversion efficiencies of over 23% with a direct perovskite solar cell (PSC) architecture.[1] [2] Currently, a lot of n-type metal oxides have been investigated as electron transporting layers (ETLs) in PSCs architectures. Among them, SnO2 shows an excellent optical transparency in the visible range and better electric properties, band alignment to perovskite,[3] and stability than the traditional TiO2,[4] making it a promising candidate for commercialization of perovskite photovoltaic technology. [5] In this frame, we found that all fresh-prepared SnO2 films used in PSCs reported in literatures are UV-treated for few minutes before the perovskite deposition. [3] However, only few works report the performances without UVO treatment as in the Wang et al. study, in which the PCE significantly increases from 0.9% to 18%.[6] Here we investigate systematically the effect on PSCs efficiency of UVO treated-SnO2 layer, deposited from a commercial colloidal solution, at different exposure time, by impedance spectroscopy, in order to explain the mechanism inside the effect of the treatment on SnO2 and to highlight the potential of SnO2 without any significant surface modification, leading an outstanding PCE of 19.8%. The modification of SnO2 affects the performance of PSCs in a number of ways: 1) to passivate the surface states for the suppression of recombination, 2) to improve wettability of the active absorber layer, and 3) to reduce the hysteresis of the devices.

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