Perovskite thin film crystallization with flash infrared annealing (FIRA)
Antonio Günzler a, Sandy Sanchez a, Ullrich Steiner a, Michael Saliba a
a Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, Fribourg, 1700, Switzerland
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Roma, Italy, 2019 May 12th - 15th
Organizers: Prashant Kamat, Filippo De Angelis and Aldo Di Carlo
Poster, Antonio Günzler, 234
Publication date: 11th February 2019

Flash Infrared Annealing (FIRA) is a new method to prepare perovskite films in under two seconds of irradiation time without the use of antisolvents.

FIRA enables the coating of rigid glass but also heat-sensitive plastic substrates with pinhole-free perovskite films that exhibit micrometer-size crystalline domains. Rivalling the record efficiencies achieved via the antisolvent method for MAPbI3 perovskite, FIRA is particularly promising for highly reproducible upscaling with respect to both large-area devices and fast throughput production lines that are compatible with roll-to-roll processing.[1]

We investigate the crystallization behavior of the perovskite thin film from the precursor solution during photo-induced rapid thermal annealing. The FIRA setup allows for precise control of irradiation times on the millisecond scale enabling different annealing protocols from several short pulses to continuous flashes and a combination of both.

Our main interest is controlling the density of nucleation sites and examining the effect on the homogeneity of crystal orientations of individual crystal grains within the crystalline domains. FIRA in this context can be used to precisely control the film morphology in a much more versatile fashion compared to antisolvent treatments. Importantly, FIRA can be used to control the film morphology of less malleable, all-inorganic perovskite materials.

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