Direct quantification of quasi-Fermi level splitting in organic semiconductor devices
Drew B. Riley a, Oskar J. Sandberg a, Nora M. Wilson b, Wei Li a, Stefan Zeiske a, Nasim Zarrabi a, Paul Meredith a, Ronald Österbacka b, Ardalan Armin a
a Sustainable Advanced Materials (Sêr-SAM), Department of Physics, Swansea University, UK, Singleton Park, Swansea, SA2 8PP Wales, United Kingdom
b Abo Akademi University, Porthaninkatu 3, Turku, 20500, Finland
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, Drew B. Riley, presentation 011
Publication date: 11th May 2021

The quantification of quasi-Fermi level splitting (QFLS) in organic photovoltaic devices would provide researchers with much needed information about the origins of non-radiative losses to the open circuit voltage. Difficulties in measuring the QFLS in the bulk of organic semiconductors (OSC's) arise due to the excitonic nature of photoexcitation in OSC's and non-radiative electrode-induced photovoltage losses occurring at the interface between an organic active-layer and the bordering electrode layers. Here a novel experimental technique called electro-modulated photoluminescence quantum yield is introduced, which quantifies the QFLS within the bulk of OSC devices at operational conditions regardless of electrode-induced losses. Drift-diffusion simulations are used to validate the technique. The QFLS is quantified for PM6:Y6 active layer devices and is shown to be independent of both device architecture and varying total non-radiative losses.

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