Preparing Zinc-doped Nickel Oxide as Hole Transport Layers for Highly-Performance Planar Perovskite Solar Cells
Erdi Akman a
a Scientific and Technological Research & Application Center, Karamanoglu Mehmetbey University, Üniversite, İbrahim Öktem Cd, Karaman, Turkey
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, Erdi Akman, presentation 062
Publication date: 11th May 2021

Inverted perovskite solar cells (PSCs) have attracted great attention due to their low fabrication cost, high performance, and negligible hysteresis. To achieve their commercialization, many researchers on inverted PSCs have been tried to improve the power conversion efficiency over the past few years. It is extremely important to develop high-quality hole transport layer (HTL) for fabricating inverted PSCs with highly performance. This work describes a facile, one-step, solution process method for the preparation of zinc-doped nickel oxide (Zn-doped NiO) hole transport layer for efficient PSCs. Inverted PSCs with the configuration of FTO/Zn:NiO/Cs0.05FA0.81MA0.14Pb(I0.90Br0.10)3/PCBM/BCP/Ag were fabricated and evaluated. We detected that a Zn-doped NiO hole transport layer can directly effect growth dynamics of perovskite on HTL layer (from SEM images). Also, photoluminescence results, we found that Zn-doped NiO hole transport layer improved the hole extraction efficiency due to reduced defect states. As a result of all these improvements, we report Zn-doping strategy for NiO improves photovoltaic performance of inverted PSCs.

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