Memory effects in halide perovskites: Physical basis and applications in memristors
Karl Cedric Gonzales a, Juan Bisquert a, Antonio Guerrero a
a Institute of Advanced Materials (INAM), Universitat Jaume I, 12071 Castelló de la Plana, Spain
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Poster, Karl Cedric Gonzales, 070
Publication date: 11th May 2021
ePoster: 

A memristor is a device that has different metastable states at a voltage V. It has a resistance that depends on the history of the system, and the states can be switched by applied voltage. Memristors are very interesting for resistive switching memory and also for building bio-inspired neuromorphic computation networks. We describe the operation of halide perovskite memristors by the interpretation of impedance spectra close to the threshold of the transition to high conduction state, where a large inductive feature represents the memory effect. Depending on the contact type, the perovskite memristors may show different mechanisms for the onset of conduction, either filamentary or due to the modification of the contact layer due to ionic accumulation and reaction at the surface.

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