Validation of Mazhari’s Equivalent Circuit for Perovskites Solar Cells with a kink in the I-V characteristic
Jose Carlos Pérez-Martínez a, Diego Martin-Martin a, Gonzalo del Pozo a, Belén Arredondo a, Beatriz Romero a
a Universidad Rey Juan Carlos, Calle Tulipan s/n, Móstoles, Spain
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV22)
València, Spain, 2022 May 19th - 25th
Organizers: Pablo Docampo, Eva Unger and Elizabeth Gibson
Oral, Jose Carlos Pérez-Martínez, presentation 112
Publication date: 20th April 2022


The appearance of kinks in the fourth quadrant of I-V characteristics decreases dramatically the efficiency of photovoltaic solar cells [1]. These S-shaped I-V curves have been successfully reproduced using different lumped-parameter equivalent circuits, composed of two or more diodes. On the other hand, Mazhari’s model has been successfully used to reproduce S-shaped I-V curves of different types of solar cells [2]. In this work, Mazhari’s lumped-parameter equivalent circuit is used to model the S-shaped I-V curves of perovskite solar cells numerically simulated with Silvaco ATLAS TCAD. The simulated solar cell structure is FTO/TiO2/MAPbI3/Spiro-OMeTAD/Au and, in order to replicate I-V curves with a kink, perovskite carrier mobility and defect density have been varied between 0.05 and 0.25 cm2/(Vs) and from 1·1014 up to 1·1015 cm-3 respectively. For each device, I-V curves have been simulated for different AM1.5 irradiation levels, from dark conditions up to 2 suns. The dark diode parameters of Mazhari’s circuit, I0dark, and ηdark, have been obtained by fitting the dark I-V curve. The other model parameters, I0rec, ηrec Iext, ηext, have been obtained by fitting Mazhari’s circuit to the I-V characteristics under illumination. This fitting process has been performed for each device. Results show that Mazhari’s circuit successfully reproduces the Silvaco numerically simulated S-shaped I-V curves, when S-shape is caused by a low value of the perovskite carrier mobility or by a high value of the defect density. The dependence of the Mazhari’s circuit parameters on the perovskite carrier mobility and on the defect density will also be discussed.

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