Two-Step Evaporation-Solution Deposition of Narrow Bandgap FAPbI3-Based Perovskite Solar Cell
Mohammadreza Golobostanfard a, Xin Yu Chin a b, Kerem Artuk a, Daniel Jacobs a, Quentin Jeangros b, Christian Wolff a, Christophe Ballif a b
a Photovoltaics and thin-films electronics laboratory (PV-lab), Institute of Electrical and Microengineering (IEM), Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel, 2000 Switzerland
b Sustainable Energy Center, Centre Suisse d'Electronique et de Microtechnique (CSEM), 2000, Neuchatel, 2000 Switzerland
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV22)
València, Spain, 2022 May 19th - 25th
Organizers: Pablo Docampo, Eva Unger and Elizabeth Gibson
Poster, Mohammadreza Golobostanfard, 230
Publication date: 20th April 2022

Perovskite-based tandems have been progressing rapidly in recent years and the 30% efficiency milestone is about to be conquered. However, higher efficiencies can be achieved by further exploiting the multi-junction concept beyond tandems. Triple junction silicon/perovskite/perovskite devices, with an efficiency potential >35%, are promising in this regard. Still, developping a stable and efficient low bandgap perovskite such as FAPbI3-based perovskite (FA: formamidinium) as a mid-cell for this purpose remains challenging. Herein, FAPbI3-based perovskite films were synthesized via a two-step deposition method combining an evaporation and a solution process to produce conformal coatings (also on textured silicon). The thick perovskite films (~800 nm) show high crystallinity with domain sizes and a roughness of about 1 µm and 65 nm, respectively. The films also reveal high absorptance above the bandgap of 1.51 eV, a value ideal for a triple-junction mid-cell. Moreover, perovskite films deposited on indium tin oxide/self-assembled-monolayer hole transport material (ITO/SAM) stack show a photoluminescence quantum yield of 0.2%, which highlights the high quality of the film and should limit open circuit voltage losses due to non-radiative recombination to about 160 meV. Planar ITO/MeO-2PACz/Perovskite/C60/SnOx/Ag devices display an J-V efficiency >20% (JSC >23.50 mA/cm2, VOC >1.03 V, FF >83% on 0.1 cm2) and stabilized maximum power point tracking (MPPT) output of 19.7%. These results highlight the suitability of FAPbI3-based perovskite films for high-efficiency triple-junction phovoltaics.


Keywords: FAPbI3-based perovskite, Evaporation-solution deposition, Triple-junctions, p-i-n configuration.

This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 101026729.

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