Advanced Perovskite Interface Characterization by Admittance Spectroscopy on MOS Structures
Jonathan Parion a b c, Tom Aernouts b c, Romain Scaffidi a b c, Guy Brammertz b c, Tamara Merckx b c, Filip Duerinckx b c, Hariharsudan Sivaramakrishnan b c, Jef Poortmans a b c, Bart Vermang a b c
a Institute for Material Research (IMO), Hasselt University, Wetenschapspark 1, 3590 Diepenbeek, Belgium
b IMOMEC, imec, Wetenschapspark 1, 3590 Diepenbeek, Belgium
c EnergyVille 2, Thor Park 8320, 3600 Genk, Belgium
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Tom Aernouts, 236
Publication date: 30th March 2023

Due to their excellent performance and relative low cost, metal-halide perovskite solar cells (PSCs) have emerged in only ten years as a promising technology both for single-junction and tandem photovoltaic applications. Despite this, the presence of ionic species inside the perovskite compounds and its coupling to oxides used as charge transport layers (CTLs) are responsible for several interface non-idealities. Among these, deep defect states and ion migration were found to increase non-radiative recombination, therefore reducing the power conversion efficiency of the cell, and to cause stability concerns [1]. Furthermore, characterization of PSCs reveals several irregular behaviours among which negative capacitance, hysteresis in the current-voltage characteristic and large photo-induced low-frequency capacitance [2]. Even though these phenomena are reported to come from the CTL/perovskite interfaces, and particularly the interface between the hole transport layer (HTL) and the perovskite, their exact physical origin and link to charge transport still remain to be fully explained. Taking these two challenges into consideration, advanced characterization and detailed physical understanding of the HTL/perovskite interface are key to its improvement and the further stability increase in PSCs .</p> <p>&nbsp;</p> <p>In the past, metal-oxide-semiconductor (MOS) devices were widely used for the study of oxide-semiconductor interfaces in silicon-based devices and inorganic thin-film solar cells. Despite this, very few references mention the use of MOS devices applied to the fundamental study of PSCs. In this work, we present an innovative approach by applying admittance measurements to perovskite MOS structures. In particular, we implement a glass/indium tin oxide (ITO)/nickel oxide (NiO)/perovskite stack, enabling the electrical characterization of the NiO/perovskite interface. This structure presents the advantage of following a similar deposition process to classical PSCs, while enabling an easier characterization of the HTL/perovskite interface which is normally buried deep into the structure. Moreover, the MOS structure is also used to assess the impact of surface treatment on the interface properties and deduce its impact on PSC stability. Admittance measurements are performed both at room and low temperature, enabling the extraction of figures of merit such as interface fixed oxide charges (Q<sub>f</sub>), interface trap density (D<sub>it</sub>), ion activation energy (E<sub>A</sub>), defect densities (N<sub>t</sub>), built-in voltage (V<sub>bi</sub>). These admittance measurements are furthermore compared to simulations to enlighten the physical phenomena at play. Because of its reliability, thoroughness and innovative character, our approach is expected to pave the way towards accurate interface characterization and improvement of PSCs.

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