Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
The performance of PVSK optoelectronic devices is limited by defects, causing the non-radiative recombination of charge carriers, which are mainly located on PVSK’s grain boundaries and at PSC‘s interfaces [1]. To improve the efficiency of devices, it is crucial to understand PVSK nucleation and growth mechanism with associated process control to reduce the trap state density. Here, we present a combined study of time-resolved opto-electronic properties and structure of PVSK thin films during vacuum deposition of formamidinium methylammonium lead iodide (FAMAPbI3) at room temperature to elucidate the processes involved during perovskite formation. To achieve the photo-active cubic phase of FAMAPbI3, no additional annealing step was used. In this work, we simultaneously measure in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) and photoluminescence (PL). The non-monotonous character of the PL intensity with initial PL increase and subsequent quenching indicates the formation of defective states connected to crystalline structure changes observed by GIWAXS. Furthermore, the stress evolution during the FAMAPbI3 growth was analyzed from the measured diffraction maps. The observed transition from compressive to tensile strain was observed and connected to the formation of the compact layer at the beginning of the perovskite formation.
This work was supported by APVV-21-0297, SK-CZ-RD-21-0043, SK-AT-20-0006, BMBF and DFG, and ITMS 313021T081.
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