Electrically Reliable Perovskite Photovoltaic Cells Against Instantaneous Kilovolt Stress
Junhyoung Park a, Hyung-Jun Song b, Mansoo Choi c, Junseop Byeon a, Jihun Jang d, MyeongGeun Ko b, Namyoung Ahn e
a Seoul National University, Department of Mechanical and Aerospace Engineering, Seoul, Korea, Republic of
b Department of Safety Engineering Seoul National University of Science and Technology
c Global Frontier Center for Multiscale Energy Systems
d Frontier Energy Solution
e Chemistry Division, Los Alamos National Lab, Los Alamos
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Junhyoung Park, 264
Publication date: 30th March 2023

 Because field-installed PSCs commonly operate at non-ideal voltages, the electrical stability of perovskite solar cells (PSCs) will be critical issue in their commercialization. [1] In addition, due to friction in roll-to-roll processes of perovskite solar cell fabrication, [2] an instantaneous extremely high voltage (IEHV) from electro-static discharge will be applied to PSCs. Furthermore, lightning strikes [3] and grid surges [4] are possible sources of IEHVs to field-installed PSCs. As a result, the influence of IEHVs on PSCs is carefully explored, and a device configuration that can prevent IEHV is proposed. An IEHV degrades PSCs by removing their intrisic diode properties. Physical and chemical degradation caused by IEHV to the interface between the perovskite film and buffer layers increases recombination losses and series resistance of solar cell device. To reinforce the perovskite interface, a well-known surface defect passivation approach is used, which involves adding excessive PbI2 passivation to perovskite. [5] The PbI2 excess perovskite phase, which is mostly locate near the interface, successfully protects PSCs from IEHV. Furthermore, introducing well-established defect passivating organic salt, phenethylammonium iodide into the interface of a perovskite film increases the device's stability against IEHV. The Flexible and high conductive Fullerene (C60) also could passivate perovskite interface near electron transport layer because flexible C60 (10nm) layer protects perovskite interface by effective extraction of electrons. As a result, we got an important insight that interface defect passivation is not only effective for realizing high performance of PSCs but also a potential option for protecting stable PSCs against electrical stress caused by IEHV. This study is expected to provide essential insights for developing electrically stable PSCs, which are critical for grid-connected, field-installed energy production sources.

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) through the Mid-career researcher program (NRF- 2022R1A2C1092582) and the Global Frontier R&D Program (2012M3A6A7054855) of the Global Frontier Center for Multiscale Energy Systems.

We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info