Anomalous charge transport in lead halide perovskite field-effect transistors and mitigation using 3D/2D heterostructures
Amita Ummadisingu a
a Chemical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom
Invited Speaker Session, Amita Ummadisingu, presentation 138
Publication date: 6th February 2024

Organic-inorganic perovskites are hybrid materials with a three-dimensional (3D) structure which have recently been found to demonstrate excellent optical and electronic properties, making them highly suitable for applications such as solar cells, light-emitting diodes, and thin film field-effect transistors (FETs) [1]. While preliminary reports on perovskite FETs showed that the device performance was greatly affected by ion migration, a detailed understanding of how ion migration leads to the instabilities in the characteristics is yet unclear [2]. We systematically investigated the development of non-idealities in the transfer characteristics by turning the film stoichiometry. The FET devices were further investigated by photoluminescence mapping and elemental analysis using electron microscopy enabling the identification of the migration of ionic defects and electrochemical reactions with metal electrodes as the key aspects of the mechanism [3].

To manage these behaviors, we explored the use of two-dimensional (2D) Ruddlesden-Popper perovskites based on the spacer – isobutylammonium, by integrating them into 3D perovskite FETs by forming 3D/2D perovskite heterostructures on the surface of the film. Remarkably, in the 3D/2D heterostructure FETs, there is a reduction in the unwanted hysteresis. Our work presents an effective strategy to integrate 2D perovskites into 3D perovskite FETs, exploit the salient features of both components, and obtain improved device performance. Furthermore, it takes a step towards the realization of the predicted charge transport behavior of perovskite materials for various optoelectronic applications.

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