Defects Activity in Metal Halide Perovskites
Annamaria Petrozza a
a Istituto di Italiano Tecnologia, Via Raffaele Rubattino, 81, Milano, Italy
Keynote, Annamaria Petrozza, presentation 148
Publication date: 6th February 2024

Metal halide perovskites (chemical formula ABX3, A = formamidinium (FA+), methylammonium (MA+), or Cs+ , B = Pb2+, Sn2+, X = I−, Br−, or Cl−) have demonstrated their potential as a material platform for a new generation of optoelectronic technology. One superior feature of metal halide perovskites is their continuously tunable bandgap from near infrared to ultraviolet by designing the chemical composition of the semiconductor crystalline unit. This enables them to provide top absorbers with matched bandgaps for tandem solar cells and emissive layers for colorful light-emitting diodes (LEDs)  just to mention the most common applications.

In this lecture I will assess the most recent advances in elucidating the (photo)chemistry of defects related to the chemical composition of the perovskite crystalline unit. I will show how they define the charge carrier dynamics in the semiconductor. Based on such understanding I will discuss the main electrical and spectroscopic features related to the activity of defects and how to interpret them. Eventually I will correlate the nature of defects and their photo-physics the the figures of merit of optoelectronic devices and their stability.

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