Back-contact perovskite light-emitting diodes
Hryhorii P. Parkhomenko a, Askhat N. Jumabekov a
a Department of Physics, School of Sciences and Humanities, Nazarbayev University, Astana 010000, Republic of Kazakhstan
Poster, Askhat N. Jumabekov, 180
Publication date: 6th February 2024

In recent years, there have been significant advancements in light-emitting diodes (LEDs) incorporating halide perovskites, showcasing notable improvements in external quantum efficiencies [1,2]. Traditionally, PeLED fabrication follows a sandwich configuration similar to PSCs, with the active layer placed between injection electrodes. However, in 2016, Jumabekov et al. introduced a novel "back-contact" or "quasi-interdigitated back-contact" architecture for PSCs [3]. This design incorporates a continuous electron-selective layer (ESL) alongside hole-selective layer (HSL) microsized fingers, separated by a dielectric layer. This structure prevents light absorption within the ESL or HSL, potentially enhancing PSC efficiency. Additionally, the back-contact design allows electrode fabrication before active layer deposition, expanding perovskite emitter deposition methods and addressing leakage current issues caused by pinholes in the perovskite film [4]. In this study, we will present fabrication of perovskite LEDs with a back-contact architecture, employing MAPbBr3 as the active layer and SnO2 along with Ni/NiOx as back electrodes [5]. The fabricated back-contact PeLEDs exhibit a quantum efficiency of 0.015% and operate at remarkably low voltages, achieving a maximum luminance of 70 cd/m2 at just 3.2 V. These findings underscore the considerable potential of the developed back-contact PeLEDs for future applications in advanced display technologies and light communication systems.

This work was supported by the Ministry of Science and Higher Education of the Republic of Kazakhstan (Grant No. AP14869871) and the Nazarbayev University Collaborative Research Grant (Grant No. 021220CRP1922).

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