Publication date: 17th February 2025
We examine trivalent doping of tin-halide perovskites as a method for reducing p-doping and controlling defect activity. Using density functional theory (DFT) calculations and experimental characterisation, we show that doping with scandium, lanthanum, and cerium efficiently raises the Fermi level, lowering background carrier concentrations and defect densities and thereby enhancing material performance.To further enhance the Fermi energy shift upon tin substitution with trivalent ions, we incorporate the allyoung I-Br ratio technique. This method optimizes the iodine-to-bromine ratio in the perovskite structure, fine-tuning the electronic properties and band alignment. Combining trivalent doping with the allyoung I-Br technique results in a more significant Fermi level upshift, further suppressing p-type conductivity and defect activity. Solar cell fabrication and testing confirm the effectiveness of this approach, with scandium-doped devices showing increased photocurrent and open-circuit voltage compared to undoped controls, even without full optimization. This work highlights the potential of combined cation doping and compositional engineering to advance the performance of tin perovskites for optoelectronic applications.
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