Publication date: 11th March 2026
Reducing non-radiative recombination at the interfaces between metal–halide perovskite absorbers and adjacent charge-selective transport layers is critical for improving the open-circuit voltage (Voc) of perovskite solar cells. In this work, a mixed passivation–insulating interlayer is introduced at the perovskite/electron-transport interface, forming a multifunctional interface that suppresses interface-induced non-radiative recombination and enhances Voc in narrow-bandgap tin–lead perovskite solar cells. In addition, a similar interfacial treatment is shown to reduce non-radiative recombination at the perovskite/hole-transport interface. This double-sided interfacial passivation strategy significantly reduces voltage losses, achieving a voltage deficit as low as 355 mV and increasing Voc to 91.5% of the detailed balance limit. As a result, narrow-bandgap devices reach a power conversion efficiency of 22.6%. Furthermore, all-perovskite tandem solar cells incorporating the modified interfaces achieve a Voc of 2.16 V and a power conversion efficiency of 26.1%. These results demonstrate that engineering mixed passivation–insulating interlayers at perovskite/transport layer interfaces is an effective approach to minimising voltage losses and advancing the performance of perovskite solar cells.
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