Solution Processed AgBiS2 Thin Film with Photocurrent over 39 mA cm-2
Ludmila Cojocaru a, Ajay Kumar Jena a, Takaya Kubo b, Satoshi Uchida b, Hiroshi Segawa a b
a Komaba Institute for Science, The University of Tokyo
b Research Center for Advanced Science and Technology, The University of Tokyo
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV26)
Uppsala, Sweden, 2026 May 18th - 20th
Organizers: Gerrit Boschloo, Ellen Moons, Feng Gao and Anders Hagfeldt
Oral, Ludmila Cojocaru, presentation 069
Publication date: 11th March 2026

Motivated by the development of solar cells based on non-toxic materials, AgBiS2 has emerged as a promising absorber for next-generation sustainable photovoltaics. Although AgBiS2 nanocrystal (NCs) based devices have shown significant progress, their fabrication routes typically relies on solvent-intensive and multistep processing routes [1,2,3]. These approaches involve (i) the synthesis of colloidal nanocrystals with well-controlled sizes below 10 nm, (ii) deposition of nanocrystals thin film, and (iii) repeated ligand-exchange treatments to promote electron coupling between nanocrystals. Such a complex procedure generates significant chemical waste, time, and limits scalability, reproducibility, and manufacturing compatibility.

In this presentation, I will introduce perovskite inspired, one-step solution-processing strategy for the fabrication of AgBiS2 thin films that avoids complex nanocrystal routes and reduces the complexity and waste. I will first discuss the materials design and crystallization mechanism, followed by the structural, optical, and electronic properties of the resulting films.

This method consists of a mixed precursor solution of silver nitrate AgNO3, bismuth nitrate Bi(NO3)3, and Thiourea in dimethylformamide, which is deposited onto the SnO2 layer by spin-coating and annealed at 240 oC for 2 min [4]. This process yields ~280 nm thick film composed of AgBiS2 with well-connected grains. When integrated into SnO2/AgBiS2/P3HT architecture solar cell and with a sustainable surface treatment, the devices deliver efficiency of 6.3 % with a high photocurrent density of 39.2 mA cm-2, representing the highest reported to date for AgBiS2 films prepared via a simple solution-based process. Additionally, both the AgBiS2 films and devices exhibit a good structural and operational stability, with no detectable phase degradation confirmed by XRD, and stable performances under maximum power point tracking for both short-term (40 min) and extended (24 hours) continuous illumination. These results highlight the potential of AgBiS2 as a sustainable, solution-processable absorber for environmentally friendly solar cells.

This work is supported by the New Energy and Industrial Technology Development Organization (NEDO).

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