Publication date: 11th March 2026
Doping of lead-halide perovskites has always been a rather complicated topic. In the dark, lead-halide perovskites often appear intrinsic and show signs of very low static doping concentrations e.g. in Hall effect measurements.1 Under illumination, however, features appear in data that are most easily explained by electron and hole densities being very different to each other. These features show up in comparisons of transient photoluminescence (PL) with transient absorption,2 in transient PL with steady-state PL3 and in the intensity dependence of steady-state PL. These features may or may not be related to mobile ions, but their signatures could be explained by a static concentration of localized states (traps) that preferentially capture one polarity of charge carriers and thereby lead to a net charge density on those defects that is invisible to dark measurements (e.g. SCLC or capacitance-voltage) but still present, once the traps are filled by illumination. So far, the concept of photodoping has been occasionally invoked to explain data, but a systematic study of its effects on device performance and spectroscopic data is currently missing. In this study, we focus on the combination of steady-state and transient PL to explain how charge stored in traps can affect the ideality factors measured from steady-state PL on films and the shapes of the tr-PL decays that are in practice often power laws of various slopes.
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