Publication date: 11th March 2026
Wide-bandgap perovskite solar cells (PSCs) suffer from severe photoinduced halide ion segregation, which leads to enhanced nonradiative carrier recombination and open-circuit voltage Voc loss, ultimately degrading device performance and operational stability. Interface engineering using molecular additives has emerged as a promising strategy to mitigate these challenges. In this work, we employ FAPbI3 perovskite quantum dots (QDs) as additives to modulate the bulk and interfacial properties of FA0.8Cs0.2Pb (I0.7Br0.3)3 absorbers in PSC devices. The incorporation of QDs effectively passivates interfacial defects, resulting in enhanced device performance, with champion devices achieving a power conversion efficiency (PCE) of ~19.6%. Moreover, the QD-treated devices exhibit improved moisture stability, retaining ~60% of their initial PCE after 400 hours of exposure under 80 (±5)% relative humidity. The introduction of FAPbI3 QDs significantly reduces Voc losses, enabling the champion devices to reach nearly ~90% of the thermodynamic limit. Time-resolved photoluminescence spectroscopy and thermal admittance spectroscopy reveal that the observed Voc enhancement primarily originates from the suppression of sub-bandgap trap states. Overall, this study demonstrates the effectiveness of perovskite QD-based interface engineering for realizing efficient and stable wide-bandgap PSCs.
The authors acknowledge the financial support from the Department of Science and Technology (DST), Government of India, under Grant No. DST/TMD/IC-MAP/2K20/03. Research fellowships provided by the Indian Institute of Technology Kanpur are gratefully acknowledged. The authors also thank ACMS, IIT Kanpur, for providing the necessary research facilities.
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