ACHIEVING HIGH OPEN-CIRCUIT VOLTAGE IN WIDE BANDGAP PEROVSKITE SOLAR CELLS BY TARGETING BOLTZMAN’S LOSSES
Rashmi Runjhun a, Martina D’Andrea a, Jordi Martorell a
a ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona) 08860, Spain
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV26)
Uppsala, Sweden, 2026 May 18th - 20th
Organizers: Gerrit Boschloo, Ellen Moons, Feng Gao and Anders Hagfeldt
Poster, Rashmi Runjhun, 149
Publication date: 11th March 2026

Metal-halide perovskites are one of the most promising materials for approaching and potentially exceeding the theoretical efficiency limit (Shockley-Queisser or S-Q) for solar cells owing to their structural diversity, high absorption coefficient, long carrier diffusion length and lifetime, and high carrier mobility. Various fundamental loss mechanisms in the solar cells such as thermalization, below bandgap transmission or Boltzmann losses restrict the power conversion efficiency (PCE) of devices to the theoretical S-Q limit of ~33 %. Among these, Boltzmann losses, which are linked to the large mismatch between the cones of incoming and outgoing photons of the device, have been least explored. This is partially owing to a low photoluminescence quantum yield (PLQY) in the majority of the photovoltaic materials used and the difficulty to obtain configurations that can effectively trap photons emitted by the photovoltaic material in addition to capturing sun photons. Research has demonstrated that properly engineered nanostructuring of solar cell architectures can push the maximum achievable PCE to just above 43%, by reducing the losses in open circuit voltage (Voc). Perovskite solar cells (PSCs) exhibit a notably high PLQY compared to most other photovoltaic technologies, making it an ideal candidate for targeting Boltzmann losses. In this work, we aim to utilize a unique photonics approach, which will focus on reducing Boltzmann losses and consequently improving the Voc of wide bandgap pure bromide-based FAPbBr3 PSCs. These devices show a Voc of >1.5 V in a configuration of ITO/NiOx/I-2PACz/FAPbBr3/PCBM/BCP/Ag. We apply the interfacial engineering and passivation strategies for reducing defects and obtaining high quality perovskite films with high PLQY values. Moreover, to further improve the device performance, we introduce a specifically designed photonic multilayer into the device, which can simultaneously target losses from reflections at the air/substrate interface along with reduction in Boltzmann losses.

Funded by the European Union (SUNKID, 101209110). Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or European Research Executive Agency. Neither the European Union nor the granting authority can be held responsible for them

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info