Additive-free sequential thermal evaporation of near-intrinsic low bandgap perovskites: from thin film to device fabrication
Tom Savenije a, Lara van der Poll a, Niels van Silfhout b, Reinder Boekhoff b, Lars Bannenberg c, Arno Smets b
a Department of Chemical Engineering, Delft University of Technology (TU Delft), The Netherlands, Netherlands
b PVMD group, Delft University of Technology, Mekelweg 4, 2628 CD Delft, the Netherlands
c Department of Radiation Science and Technology, Faculty of Applied Sciences, Delft University of Technology, 2629 JB Delft, The Netherlands
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV26)
Uppsala, Sweden, 2026 May 18th - 20th
Organizers: Gerrit Boschloo, Ellen Moons, Feng Gao and Anders Hagfeldt
Oral, Tom Savenije, presentation 152
Publication date: 11th March 2026

Single-junction perovskite solar cells (PSCs) are nearing the maximum efficiency attainable with a single absorber layer. To exceed this limit, tandem cells are utilized. These architectures necessitate low bandgap materials, achieved by partially substituting lead(II) (Pb2+) with tin(II) (Sn2+) in the perovskite structure. In this study, we present the sequential thermal evaporation (sTE) of the low bandgap formamidinium lead-tin iodide (FAPb0.5Sn0.5I3).[1] An alloy of SnI2 and PbIis prepared by heating and evaporated in vacuum, followed by the deposition of FAI. This layer-by-layer technique yields highly oriented, compact, and crystalline thin films with continuous grains averaging over 1 mm in size throughout the film thickness. Photoconductance measurements reveal mobilities exceeding 60 cm2/(Vs) and lifetimes surpassing 2 micros. Most interestingly structural analysis indicates that precursor interdiffusion readily occurs at room temperature, resulting in a mixed amorphous material. Complete crystallisation into the perovskite phase requires annealing at 200°C. In contrast to findings with pure lead perovskites, sTE of mixed lead tin perovskites allows the fabrication of 750 nm thick films in a single cycle. A comparison between the sTE films and spin-coated samples of the same composition shows the superior photoconductance of the sTE films without the need for any additives such as SnF2. PSCs produced using this method, with the architecture ITO/PEDOT:PSS/FAPb0.5Sn0.5I3/C60/BCP/Ag, reach efficiencies over 10%. Overall, this study highlights the potential of sTE in producing high-quality low bandgap perovskite materials and solar devices.

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