Publication date: 11th March 2026
Here we present results of advanced modelling studies on the defect mediated degradation pathways of prototypical THPs. We show how Sn-vacancies are central in promoting both material p-doping and formation of Sn(IV) phases. Interestingly, while p-doping dominates in the bulk, Sn oxidation is only favoured at surfaces or grain boundaries. Thus achieving uniform thin films coupled with proper surface passivation strategies represent a pathway towards achieving more stable THP-based devices. Surprisingly, THPs have also received a large attention because of their superior stability in water environment compared to their lead counterparts. We further unveil the key factors determining the stability of mixed-halide THPs against photoinduced halide segregation phenomena. Molecular and ionic strategies to mitigate p-doping in THPs are also presented.
References
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