Publication date: 11th March 2026
Radio Frequency (RF) magnetron sputtering is a well-established technology in research labs and industries for the deposition of a wide range of materials. It is a scalable, solvent-free deposition method capable of producing uniform, compact thin films with compatibility of roll-to-roll manufacturing. Despite its many advantages, this technique is underexplored for the deposition of metal halide perovskites, as these materials are commonly deposited via solution process or thermal evaporation. Few reported studies demonstrate thin-film deposition via single-target magnetron sputtering[1,2]; and the integration of such layers in devices is even more rare.[3]
To investigate how process parameters influence on film formation processes and resultant layer properties, we explored magnetron sputtering of perovskites layers using a single target with the most stable composition of FACsPb(IBr)3. We have systematically investigated the influence of the target stoichiometry, applied RF power, and argon pressure on deposited thin films. Structural, compositional, and morphological analyses provided insight into the quality of deposited thin films. We have discovered key limitations of sputtered thin films with very rough surfaces and inadequate grain formation, which hinder their application in optoelectronic devices. Additionally, target disintegration during every deposition leads to huge material wastage. Finally, we propose some potentials path ways to address these barriers of single-target magnetron sputtering.[4]
1. European Research Council (ERC) under the European Union's Horizon 2020 Research and Innovation Programme (Grant Agreement No. 101087679, PEROVAP)
2. Deutsche Forschungsgemeinschaft (DFG) within the framework of the Special Priority Program SPP 2196 “PERFECT PVs” (Project No. 424216076).
3. Leibniz Programme for Women Professors (Project SUPERSOL, P144/2022).
4. Leibniz-Institute for Solid State and Materials Research Dresden
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