Structure–Property Relationship in Low-Dimensional Antimony and Bismuth Halide Perovskite Thin Films
Stevan Gavranovic a, Salvatore Valastro b, Ioannis Deretzis b, Emanuele Smecca b, Alessandra Alberti b, Giovanni Mannino b, Jan Pospisil a
a Brno University of Technology, Faculty of Chemistry, Materials Research Centre, Purkynova 464/118, 612 00 Brno, Czech Republic
b CNR Institute for Microelectronics and Microsystems (CNR-IMM)
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV26)
Uppsala, Sweden, 2026 May 18th - 20th
Organizers: Gerrit Boschloo, Ellen Moons, Feng Gao and Anders Hagfeldt
Poster, Stevan Gavranovic, 210
Publication date: 11th March 2026

The family of lead halide perovskite materials has become widely recognized for its outstanding semiconductor properties suitable for the next-generation of optoelectronics. However, the presence of the lead (Pb2+) cation in their structure has driven the search for environmentally friendly alternatives. Bismuth (Bi3+) and antimony (Sb3+) have emerged as promising substitutes, owing to their isoelectronic configuration with Pb2+. Although they share the same electronic structure, the incorporation of these trivalent cations into the perovskite lattice leads to a reduction in dimensionality. Instead of a 3D network of corner-sharing octahedra, the low dimensional perovskite is built either from 2D corrugated layers of octahedra or by isolated face-sharing bioctahedral clusters. Due to this reduction in dimensionality, these materials typically have larger bandgaps and more limited charge transport than their lead counterparts [1].    

In this work, we present a systematic study of structure–property relationships in bismuth (MA3Bi2I9, Cs3Bi2I9) and antimony (MA3Sb2I9) perovskite thin films and analyze their application potential. Optical transitions in these materials were studied using Critical Point analysis[1], supported by density functional theory calculations (DFT). Temperature-dependent ellipsometry measurements were performed to track any phase transitions and their influence on optical properties and device functionality. Charge carrier dynamics in these materials were studied using recently developed Advanced Space Charge Limited Currents model (A-SCLC). Finally, the practical potential of these materials was evaluated in three different device types: (i) solar cells in monolithic Solaronix architecture, (ii) x-ray detectors and (iii) memristive devices.  

Despite their structural similarity, the three materials exhibit distinct optical behavior. Bismuth perovskites display a well-defined sub-bandgap excitonic feature, while the antimony analogue does not. Our results highlight the critical role of crystal dimensionality, spin-orbit coupling, and chemical composition in functionality of antimony and bismuth optoelectronic devices.

This work is funded by Grant Agency of the Czech Republic through project No. 26-23776S and by Brno University of Technology through project VUT EXCELENCE.

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