Publication date: 4th December 2020
Recently, the record photovoltaic performance of perovskite-silicon tandem solar cells of 29.15% has surpassed the record efficiency of single-junction devices made of silicon and equaled the global record efficiency for any single-junction device established by Alta Device’s thin-film GaAs technology. However, there is still a substantial gap between the detailed balance efficiency limit based on optical simulations (>35%) and this realized record performance. While potentially avoidable optical losses are responsible for part of the difference, a significant source of performance overestimation is the use of idealized assumptions regarding the electrical properties, i.e., transport and recombination, in the detailed balance assessment of limiting efficiency.
The aim of this contribution is to present a tool for a more realistic performance assessment in the form of full optoelectronic device simulation of the entire tandem stack, including the interlayers connecting top and bottom subcells (recombination junction). We present a comprehensive and enabling approach to the modeling of perovskite-silicon tandem solar cell device characteristics. The framework is based on 1D opto-electronic device simulation at steady-state and includes specific features of the perovskite materials such as mobile ions as well as the explicit consideration of the recombination junction that is key to the simulation of tandem devices. As a further salient feature, advanced optimization algorithms are used for both optical and full optoelectronic device optimization.
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