Low-pressure accessible gas-quenching for MA-free perovskite solar cells
Meng Zhang a b
a Southwest Petroleum University, 8 Xindu Avenue, Xindu District, Chengdu City,Sichuan Province, P.R. China, Chengdu, China
b University of New South Wales, School of Photovoltaics and Renewable Energy Engineering, Tyree Energy Technology Building, University of NSW, Sydney, Australia
Proceedings of International Online Conference on Hybrid Materials and Optoelectronic Devices (HYBRIDOE21)
Online, Spain, 2021 December 15th - 17th
Organizers: Jinwei Gao, Hua Yu, Dewei Zhao, Haizheng Zhong, Hairen Tan and Xueqing Xu
Invited Speaker, Meng Zhang, presentation 014
DOI: https://doi.org/10.29363/nanoge.hybridoe.2021.014
Publication date: 3rd December 2021

Gas-quenching is a robust and highly-reproducible approach for upscalable manufacturing of high-quality perovskite films. However, the requirement of high gas pressure on MA-free perovskite materials has limited the accessibility for upscalable manufacturing of stable perovskite films and devices. In this work, by employing tetramethylene sulfoxide (TMSO) as a ligand in the precursor solution, high-quality FA0.9Cs0.1PbI3 perovskite films have been successfully obtained by gas-quenching. Study on the precursor solution and film-forming process revealed the effect of TMSO on the formation of large-grain films, as well as the critical role of gas-quenching in regulating the intermediate films. The absolute MA-free perovskite device exhibits superior stability over the PSCs obtained with MACl additive. The fabricated MA- and Br-free PSCs shows a power conversion efficiency of 21.3% without any passivation treatment. Moreover, gas-quenching with TMSO enables wide gas pressure processing window and superior accessibility to low-pressure processing, demonstrating its promising potential in up-scaling manufacturing of high-efficiency MA-free PSCs.

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