Publication date: 15th May 2026
Self-powered photodetectors and indoor photovoltaics have attracted significant attention for renewable energy generation, sensing, and advanced optoelectronic systems. Despite their exceptional optoelectronic performance, the high toxicity of lead and long-term ambient instability necessitate the development of alternatives to lead-halide perovskites (LHPs). Bismuth and antimony-based halide perovskite-inspired materials (PIMs) have attracted significant attention as environmentally friendly and stable replacements to LHPs. However, the optoelectronic performances of PIMs are still poor compared to LHPs, mainly due to their wider bandgap, reduced electronic dimensionality, larger carrier effective mass, strong self-trapped exciton formation, and low mobility-lifetime product. In this study, we have synthesized an electronically 2D PIM, Cs2AgBi2I9 (CABI), via partial incorporation of Ag+ at the A-site of the highly stable Cs3Bi2I9 (CBI) lattice. The partial incorporation of Ag+ results in a narrower band gap of 1.78 eV, attributed to the orbital hybridization between Ag 5s and I 6p orbitals. A larger polaronic radius (34 Å) of CABI is estimated via density functional theory in comparison with CBI (21 Å). Consequently, the 2D-CABI demonstrated outstanding carrier mobility-lifetime product (μτ) of 3.4 × 10−3 cm2V−1, weaker electron-phonon coupling, and longer hot-carrier lifetimes compared to other solution-processed Bi-PIMs.[1] With those exceptional properties, CABI-based self-powered photodetector and indoor photovoltaic devices have been developed, delivering the highest responsivity of 0.219 mA/W under 19 μW/cm2 illumination and PCE of ≈8% under 1000 lux illumination, which are the highest among other PIMs [2]. Owing to the narrowed bandgap, the devices deliver broadband photodetection performance and operate effectively under diverse indoor lighting environments with color temperatures ranging from 2700 to 6500 K. This work opens a new avenue for exploring the potential of double A-site cation-based PIMs for designing next-generation optoelectronic technologies
Author acknowledges CSIR-UGC for the fellowship and the Indian Association for the Cultivation of Science for research facilities. I would like to acknowlede my doctoral superviser Dr. K. D. M. Rao and all my excellent collaborators. This work acknowledges the financial support from the Science and Engineering Research Board (SERB) project CRG/2022/004873 and acknowledges support from the Technical Research Center (TRC, Project No. AI/I/65/IACS/2014G), IACS, Kolkata.
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