t-NDI Additive and Toluene Antisolvent Engineering for Efficient MAPbI₃ Perovskite Solar Cells
Meltem Dinleyici a, Serap Gunes b, huriye icil a
a Department of Chemistry, Faculty of Arts and Sciences, Eastern Mediterranean University, 99628, Famagusta, N. Cyprus, Mersin 10, Turkey, 99628, Famagusta, N. Cyprus, Mersin 10, Turkey, Famagusta, Cyprus
b Department of Physics, Faculty of Science and Letters, Yildiz Technical University, 34210 Istanbul, Turkey
Proceedings of Hybrid and Perovskite materials for energy, lighting, sensing and computing (HYPE26)
Athens, Greece, 2026 June 22nd - 24th
Organizers: Maria Vasilopoulou and Thomas Stergiopoulos
Oral, huriye icil, presentation 008
Publication date: 15th May 2026

Organic–inorganic hybrid perovskites, particularly methylammonium lead iodide (CH₃NH₃PbI₃, MAPbI₃), are promising photoactive materials for photovoltaic applications due to their excellent light-harvesting capability, long carrier diffusion length, and solution-processable fabrication. However, pinhole formation, uncontrolled crystallization, and defect-rich grain boundaries continue to limit the reproducibility, efficiency, and stability of perovskite solar cells. Controlling crystallisation dynamics with suitable additives and anti-solvent treatment is therefore essential for obtaining compact, defect-minimised films.

In this study, a novel 2,4-diamino-6-phenyl-1,3,5-triazine-linked naphthalene diimide compound (t-NDI) was synthesized and used as an additive in the MAPbI₃ precursor system. Combined with a precisely timed toluene antisolvent washing step, this approach regulated nucleation and crystal growth under ambient conditions, eliminating the need for an inert argon atmosphere. X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) analyses confirmed improved crystallinity, enlarged crystal domains, and reduced defect density. Additive-free devices exhibited a short-circuit current density (Jsc) of 24.5 mA cm⁻², an open-circuit voltage (Voc) of 1.025 V, a fill factor (FF) of 0.62, and a power conversion efficiency (PCE) of 15.5%. In contrast, t-NDI-containing devices showed a Jsc of 23.1 mA cm⁻², a Voc of 1.036 V, an improved FF of 0.69, and a higher PCE of 16.5%. The performance enhancement was mainly attributed to the improved fill factor upon incorporation of the t-NDI additive. These findings demonstrate a simple, scalable, and experimentally accessible strategy for fabricating high-quality MAPbI₃ films for efficient perovskite solar cells under ambient conditions.

The authors gratefully acknowledge Eastern Mediterranean University for Institutional support.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info