Publication date: 15th May 2026
Due to the high softness of organic-inorganic halide perovskites, their properties are often studied under high hydrostatic pressure, but the effect of pressure at different temperatures is much less studied. For MAPbI3 and MAPbBr3, we observed that the bandgap pressure coefficient is different for different phases, but also varies with temperature [1, 2]. We have also observed a temperature dependence of the pressure coefficient for (4FP)2SnI4 [3] and TMA2SnI4 [4], but this feature has not been discussed in detail so far, while it is well known that the change of the bandgap pressure coefficient with temperature is unusual for inorganic semiconductors such as Ge, GaAs or GaN and therefore it is interesting to better understand this phenomenon in organic-inorganic halide perovskites. In this paper, we will focus on our recent studies of the bandgap pressure coefficient in ACE2PbBr4 at different temperatures, compare these results with calculations performed within the density functional theory, and discuss the reasons for the change in the pressure coefficient with temperature, including the role of the softness of organic-inorganic perovskites and the electron-phonon interaction. So far ACE2PbBr4 was studied under hydrostatic pressure [5], but photoluminescence measurements under hydrostatic pressure at various temperatures were not reported for this compound. In this paper we will also present and discuss the pressure dependence of both the near-band edge emission and self-trap exciton emission.
This work was supported by the National Science Centre in Poland through OPUS Grant No. 2025/57/B/ST3/03683.
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